IPB65R190C6ATMA1

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Manufacturer Part	IPB65R190C6ATMA1
Manufacturer	Rochester Electronics
Description	MOSFET N-CH 650V 20.2A D2PAK
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPB65R190C6ATMA1 PDF

Availability

InStock	13,800
UnitPrice	$ 1.35000

IPB65R190C6ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPB65R190C6ATMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:	73 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1.62 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	151W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.